Micron Technology, Inc.
21.04.2011 04:30
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SINGAPORE, 2011-04-21 04:30 CEST (GLOBE NEWSWIRE) —
SINGAPORE, April 21, 2011 (GLOBE NEWSWIRE) — Intel Corporation (Nasdaq:INTC)
and Micron Technology, Inc. (Nasdaq:MU) today expanded their NAND Flash memory
joint venture operations with the official opening of IM Flash Singapore.
The US$3 billion facility is expected to employ about 1,200 and is currently
ramping production of the companies– industry-leading 25 nanometer (nm) NAND
Flash memory. The companies announced the opening of the state-of-the-art 300
millimeter facility at a ceremony with Singapore government representatives,
including Prime Minister Lee Hsien Loong.
–In just five short years, Intel and Micron have successfully collaborated to
become the industry–s NAND Flash leader,– said Steve Appleton, Micron Chairman
and CEO. –The opening of IM Flash Singapore marks another significant milestone
in our partnership and complements Micron–s Singapore operations that serve as
our company–s Asian hub.–
–The Intel-Micron partnership has been highly successful in developing
innovative NAND Flash technology,– said Dave Baglee, Intel Vice President and
Director of NAND Manufacturing and Operations. –The IM Flash joint venture has
been able to create tremendous momentum and industry leading manufacturing
capabilities. We look forward to adding IM Flash Singapore to our global
manufacturing network.–
IM Flash has ramped production of 25nm NAND Flash memory at the Singapore
facility since mid-2010. The facility is expected to be at full production
levels later in 2011.
–IM Flash Singapore was able to start up very successfully with its first wafer
out a month ahead of the schedule and with matching quality. This enabled an
early shipment release to both Intel and Micron,– said Chen Kok Sing, IM Flash
Singapore Managing Director. –This success is a testament of the solid
commitment and seamless execution of our team members. This is also possible
only with the strong support from both parent companies and everyone in the IM
Flash manufacturing network.–
Along with the new Singapore facility, the joint venture produces products at
two other joint venture manufacturing locations: Lehi, Utah, and Micron–s
Manassas, Va., facility. Intel and Micron also recently introduced 20nm NAND
Flash memory process technology that will be implemented at the IM Flash
facilities during the course of 2011.
Intel, the world leader in silicon innovation, develops technologies, products
and initiatives to continually advance how people work and live. Additional
information about Intel is available at www.intel.com/pressroom/.
Micron Technology, Inc. is one of the world–s leading providers of advanced
semiconductor solutions. Through its worldwide operations, Micron manufactures
and markets a full range of DRAM, NAND and NOR flash memory, as well as other
innovative memory technologies, packaging solutions and semiconductor systems
for use in leading-edge computing, consumer, networking, embedded and mobile
products. Micron–s common stock is traded on the NASDAQ under the MU symbol. To
learn more about Micron Technology, Inc., visit www.micron.com.
The Micron Technology, Inc. logo is available at
http://www.globenewswire.com/newsroom/prs/?pkgid=6950
?2011 Micron Technology, Inc., and Intel Corporation. All rights reserved.
Information is subject to change without notice.
Micron and the Micron logo are trademarks of Micron Technology, Inc. Intel is a
trademark of Intel Corporation or its subsidiaries in the United States and
other countries. All other trademarks are the property of their respective
owners.
CONTACT: Nick Jacobs
Intel Asia Pacific
+65-6213-1294
nick.jacobs@intel.com
Daniel Francisco
Micron Technology, Inc.
+1-208-368-5584
dfrancisco@micron.com
News Source: NASDAQ OMX
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Language: English
Company: Micron Technology, Inc.
United States
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ISIN: US5951121038
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