DGAP-News: Micron Announces Sample Availability for Its Third-Generation RLDRAM(R) Memory

Micron Technology, Inc.

26.05.2011 06:15
—————————————————————————

Company Introduces Integrated Silicon Solution, Inc. as Second Source Partner

BOISE, Idaho, 2011-05-26 06:15 CEST (GLOBE NEWSWIRE) —
Micron Technology, Inc., (Nasdaq:MU) today announced that early engineering
samples are available for its third-generation reduced latency DRAM (RLDRAM 3
memory). RLDRAM 3 is a high-bandwidth memory technology that enables a more
efficient transfer of information across the network. Designed for
high-performance networking applications, including high-end routers and
switches that require back-to-back READ/WRITE operations or completely random
access, RLDRAM 3 memory is an ideal choice for 40 Gigabit Ethernet (GbE) and
100 GbE designs, packet buffering and inspection, and lookup tables.
Additionally, RLDRAM 3 memory offers significant improvements in speed,
density, latency and power consumption.

The proliferation of Internet-based video services like IPTV and video on
demand, combined with growth in mobile applications and cloud computing, is
driving the need for a more efficient network infrastructure that can keep pace
with the amount of data being moved online. RLDRAM 3 memory provides networking
customers with a high-bandwidth, low-latency solution that can support the
increases in protocol operating speeds, such as 100 GbE.

RLDRAM 3 memory provides sustainable data rates up to 2133 megabits per second
(Mb/s) and offers the industry–s lowest random access latency of sub-10
nanoseconds. It also offers greater energy efficiency through familiar 1.2V IO
and 1.35V core voltage levels.

–At Micron, we recognize the pressure customers face today to optimize their
network technology to support the growth in data volume and deal with the
associated complexity of the changing infrastructure,– said Bruce Franklin,
Director of Networking and Storage Business Development for Micron–s DRAM
Solutions Group. –RLDRAM 3 memory is a low-latency, high-bandwidth solution
that provides plenty of headroom to accommodate our customers– evolving
networking memory requirements.–

Micron today also announced that Integrated Silicon Solution, Inc. (ISSI) will
become an alternate supplier of Micron–s RLDRAM 3 memory, providing assurance
of commercial volume and longevity for networking customers.

–By working closely with Micron, we will be able to support our customers–
requests to provide RLDRAM 3 memory,– said Pat Lasserre, ISSI Director of
Strategic Marketing. –With the addition of RLDRAM 3 to our product line, we are
excited to address customers– demands for long-term support of specialized,
high-performance memory technologies, driven by networking standards like 100
GbE.–

Product Availability

Information on ordering RLDRAM 3 product samples can be found on our Web site.
Micron is expected to begin production of RLDRAM 3 memory during the second
half of 2011.

Relevant Links

There are other ways to stay up-to-date on Micron and Crucial news:

— Micron Innovations Blog: www.micronblogs.com
— Micron on Twitter: http://twitter.com/microntechnews and
http://twitter.com/realssd
— Micron Pressroom: www.micron.com/media

About Micron

Micron Technology, Inc., is one of the world–s leading providers of advanced
semiconductor solutions. Through its worldwide operations, Micron manufactures
and markets a full range of DRAM, NAND and NOR flash memory, as well as other
innovative memory technologies, packaging solutions and semiconductor systems
for use in leading-edge computing, consumer, networking, embedded and mobile
products. Micron–s common stock is traded on the NASDAQ under the MU symbol. To
learn more about Micron Technology, Inc., visit www.micron.com.

The Micron Technology, Inc. logo is available at
http://www.globenewswire.com/newsroom/prs/?pkgid=6950

?2011 Micron Technology, Inc. All rights reserved. Information is subject to
change without notice. –Micron– and the Micron logo are registered trademarks
of Micron Technology, Inc. All other trademarks are the property of their
respective owners.

This press release contains forward-looking statements regarding production of
RLDRAM 3. Actual events or results may differ materially from those contained
in the forward-looking statements. Please refer to the documents Micron files
on a consolidated basis from time to time with the Securities and Exchange
Commission, specifically Micron–s most recent Form 10-K and Form 10-Q. These
documents contain and identify important factors that could cause the actual
results for Micron on a consolidated basis to differ materially from those
contained in our forward-looking statements (see Certain Factors). Although we
believe that the expectations reflected in the forward-looking statements are
reasonable, we cannot guarantee future results, levels of activity, performance
or achievements.

CONTACT: Dan Francisco
dfrancisco@micron.com
916-812-8814
News Source: NASDAQ OMX

26.05.2011 Dissemination of a Corporate News, transmitted by DGAP –
a company of EquityStory AG.
The issuer is solely responsible for the content of this announcement.

DGAP–s Distribution Services include Regulatory Announcements,
Financial/Corporate News and Press Releases.
Media archive at www.dgap-medientreff.de and www.dgap.de

—————————————————————————

Language: English
Company: Micron Technology, Inc.

United States
Phone:
Fax:
E-mail:
Internet:
ISIN: US5951121038
WKN:

End of Announcement DGAP News-Service

—————————————————————————